FGA50T65SHD
Manufacturer:
On Semiconductor
Mfr.Part #:
FGA50T65SHD
Datasheet:
Description:
IGBTs TO-3PN Through Hole 2.1 V 319 W 100 A
| Parameter | Value |
|---|---|
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Type | Trench Field Stop |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 319 W |
| Power Dissipation | 319 W |
| Max Collector Current | 100 A |
| Collector Emitter Breakdown Voltage | 650 V |
| Reverse Recovery Time | 34.6 ns |
| Continuous Collector Current | 100 A |
| Collector Emitter Voltage (VCEO) | 2.1 V |
| Collector Emitter Saturation Voltage | 2.14 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Maximum Gate Emitter Voltage | 30 V |
Stock: 441
Distributors
pcbx
pcbxUnit Price$3.49084
Ext.Price$3.49084
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $3.49084 | $3.49084 |
| 10 | $2.99311 | $29.93110 |
| 25 | $2.56635 | $64.15875 |
| 50 | $2.20044 | $110.02200 |
| 100 | $1.88670 | $188.67000 |
| 300 | $1.61769 | $485.30700 |
| 500 | $1.38702 | $693.51000 |